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MG400J2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG400J2YS60A(600V/400A 2in1)
High Power Switching Applications Motor Control Applications
* * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.8 V (typ.)
Equivalent Circuit
1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
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MG400J2YS60A
Package Dimensions: 2-123C1B
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
Signal Terminal Layout
7 5
8 2.54 25.4 0.6 6
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
3 1
4 2.54 2
2.54
Weight: 375 g
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MG400J2YS60A
Maximum Ratings (Ta = 25C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol 3/4 Rating 600 20 400 A 800 400 A 800 2160 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V
Electrical Characteristics (Tj = 25C)
1. Inverter Stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 400 A VCC = 300 V, IC = 400 A VGE = 15 V, RG = 7.5 W (Note 1) Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 400 mA VGE = 15 V, IC = 400 A Tj = 25C Tj = 125C Min 3/4 3/4 3/4 5.0 3/4 3/4 3/4 0.10 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 6.5 1.8 3/4 3500 3/4 3/4 3/4 3/4 1.8 Max +3/-4 100 1.0 8.0 2.1 V 2.3 3/4 1.00 2.00 0.50 0.50 2.2 V ms pF Unit mA nA mA V
VCE = 10 V, VGE = 0, f = 1 MHz
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25C)
Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V 3/4 VCC = 300 V, VGE = 15 V Min 480 100 3/4 Typ. 3/4 3/4 3/4 Max 3/4 125 6.5 Unit A C ms
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MG400J2YS60A
3. Module (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min 3/4 3/4 3/4 Typ. 3/4 3/4 0.013 Max 0.057 0.068 3/4 C/W Unit C/W
Switching Time Test Circuit
RG -VGE
IF
VCC IC RG L
Timing Chart
90% 10%
VGE
90% Irr Irr IC trr 20% Irr 90%
10% td (on) td (off)
10%
tf
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MG400J2YS60A
Remark

l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. * VCC < 375 V = < * 13.8 V = VGE < 16.0 V = > 7.5 W * RG = * Tj < 50C =

l To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions.
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MG400J2YS60A
IC - VCE
800 Common emitter Tj = 25C 12 V VGE = 20 V 300 400
IC - VCE
10 V 15 V 12 V 9V
(A)
600 VGE = 20 V 15 V
IC
Collector current
400 10 V 200 9V 8V 0 0 1 2 3 4 5
Collector current
IC
200 8V 100 Common emitter Tj = 125C 0 0 1 2 3 4 5
Collector-emitter voltage
VCE
(V)
(A)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 Common emitter 12 Common emitter
VCE - VGE
(V)
Tj = 125C 10
(V)
Tj = 25C 10
VCE
8
VCE
8 6
Collector-emitter voltage
Collector-emitter voltage
6
4 IC = 600 A 2 200 A 400 A 0 0 5 10 15 20
4 IC = 600 A 2 400 A 0 0 5 10 15 200 A 20
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
VCE - VGE
12 Common emitter 800 Tj = -40C 10 Common emitter VCE = 5 V
IC - VGE
(V)
VCE
(A)
6
600
Collector-emitter voltage
Collector current
IC
400
8
25C
4 IC = 600 A 2 400 A 0 0 5 10 15 200 A 20
Tj = 125C 200 -40C
0 0
4
8
12
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
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MG400J2YS60A
IF - VF
800 500 Common cathode VGE = 0 V Common emitter RL = 0.75 W Tj = 25C
VCE, VGE - QG
20
(V)
Collector-emitter voltage
Tj = 25C 400
300
600 V
12
200
200 V 400 V
VCE = 0 V
8
200
125C
-40C
100
4
0 0
0.5
1
1.5
2
2.5
3
0 0
1000
2000
3000
0 4000
Forward voltage
VF
(V)
Charge
QG
(nC)
SW time - RG
10000 Common emitter, VCC = 300 V IC = 400 A VGE = 15 V Tj = 25C Tj = 125C 100
Eon, Eoff - RG
Eon
(mJ)
Eoff
(ns)
SW time
1000 td (off)
td (on)
tr
SW loss Eon, Eoff
toff
ton
Common emitter VCC = 300 V IC = 400 A VGE = 15 V 10 0 Tj = 25C Tj = 125C 15 20 25
tf 100 0 5 10 15 20 25 5
10
Gate resistance RG
(9)
Gate resistance RG
(9)
SW time - IC
10000 Common emitter VCC = 300 V RG = 7.5 W VGE = 15 V Tj = 25C Tj = 125C 100
Eon, Eoff - IC
(ns)
toff
SW loss Eon, Eoff
(mJ)
Eon
SW time
1000 ton td (on)
td (off)
10
Eoff
tf
Common emitter VCC = 300 V RG = 7.5 W VGE = 15 V 1 0 Tj = 25C Tj = 125C 300 400
100 0
tr 100 200 300 400
100
200
Collector current
IC
(A)
Collector current
IC
(A)
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Gate-emitter voltage VGE
600
Forward current IF
VCE
400
16
(A)
(V)
MG400J2YS60A
Irr, trr - IF
1000 10
Edsw - IF
(mJ) Reverse recovery loss Edsw
Reverse recovery time trr (ns) Reverse recovery current Irr (A)
trr
100
1
Irr Common cathode VCC = 300 V RG = 7.5 W VGE = 15 V 10 0 100 200 300 Tj = 25C Tj = 125C 400
Common cathode VCC = 300 V RG = 7.5 W VGE = 15 V 0.1 0 100 200 300 Tj = 25C Tj = 125C 400
Forward current
IF
(A)
Forward current
IF
(A)
C - VCE
1000000
(pF)
100000
Cies
Capacitance C
10000
1000
Coes Cres
100 0.01
0.1
1
10
100
1000
Collector-emitter voltage
VCE
(V)
Reverse bias SOA
1000
Rth - tw
1
IC
(A)
Tc = 25C
Collector current
(C/W)
0.1
Diode stage
100
Rth (j-c)
Transistor stage 0.01
Tj < 125C = RG = 7.5 W VGE = 15 V 10 0 200 400 600 0.001 0.001 0.01 0.1 1 10
Collector-emitter voltage
VCE
(V)
Pulse width
tw
(s)
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MG400J2YS60A
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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2002-09-06

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